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Physics-

General

Easy

Question

The shows two NAND gates followed by a NOR gate. The system is equivalent to the following logic gate

OR
AND
NAND
None of these

The correct answer is: AND

The truth table of the circuit is given

Output Z of single three input gate is that of AND gate.

Related Questions to study

The combination of gates shown below produces

The combination of gates shown below produces

physics-General

Figure gives a system of logic gates. From the study of truth table it can be found that to produce a high output (1) at R, we must have

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The following configuration of gate is equivalent to

The following configuration of gate is equivalent to

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For the transistor circuit shown below, if $β = 100$ , voltage drop between emitter and base is 0.7 V then value of $V_{C E}$ will be

For the transistor circuit shown below, if $β = 100$ , voltage drop between emitter and base is 0.7 V then value of $V_{C E}$ will be

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In the following circuit find $I_{1}$ and $I_{2}$

In the following circuit find $I_{1}$ and $I_{2}$

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In the circuit shown in figure the maximum output voltage $V subscript 0 end subscript$ is

In the circuit shown in figure the maximum output voltage $V subscript 0 end subscript$ is

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Ge and Si diodes conduct at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the valve of V₀ changes by

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A diode is connected to 220 V (rms) ac in series with a capacitor as shown in figure. The voltage across the capacitor is

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In which of the following circuit is the current maximum just after the switch S is closed

In which of the following circuit is the current maximum just after the switch S is closed

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Range of function f(x) = $fraction numerator x squared plus 2 x plus 3 over denominator x end fraction comma x element of R$ is given by

Range of function f(x) = $fraction numerator x squared plus 2 x plus 3 over denominator x end fraction comma x element of R$ is given by

Find V_AB

Find V_AB

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The circuit shown in following figure contains two diode $D subscript 1 end subscript$ and $D subscript 1 end subscript$ each with a forward resistance of 50 ohms and with infinite backward resistance. If the battery voltage is 6 V, the current through the 100 ohm resistance (in amperes) is

The circuit shown in following figure contains two diode $D subscript 1 end subscript$ and $D subscript 1 end subscript$ each with a forward resistance of 50 ohms and with infinite backward resistance. If the battery voltage is 6 V, the current through the 100 ohm resistance (in amperes) is

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In the following circuits PN-junction diodes D₁, D₂ and D₃ are ideal for the following potential of A and B, the correct increasing order of resistance between A and B will be

i) – 10 V, – 5V (ii) – 5V, – 10 V
iii) – 4V, – 12V

In the following circuits PN-junction diodes D₁, D₂ and D₃ are ideal for the following potential of A and B, the correct increasing order of resistance between A and B will be

i) – 10 V, – 5V (ii) – 5V, – 10 V
iii) – 4V, – 12V

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In the circuit given below, V(t) is the sinusoidal voltage source, voltage drop $V subscript A B end subscript left parenthesis t right parenthesis$ across the resistance R is

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The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I-V characteristic curve. The voltage across the diode is independent of current above the knee point. If V_B = 5 V, then the maximum value of R so that the voltage is above the knee point, will be

The junction diode in the following circuit requires a minimum current of 1 mA to be above the knee point (0.7 V) of its I-V characteristic curve. The voltage across the diode is independent of current above the knee point. If V_B = 5 V, then the maximum value of R so that the voltage is above the knee point, will be

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